China Bright ekhombe incam i-tungsten electrode ephezulu-yobunyulu uMvelisi kunye noMboneleli

Incam eqaqambileyo ye-tungsten electrode ephezulu-yobunyulu

Inkcazelo emfutshane:

I-electrode ye-Tungsten yenziwe ngezinto ezinendawo ephezulu yokunyibilika, ukumelana nokugqwala, ukuxinana okuphezulu, ukuhanjiswa kakuhle kwe-thermal kunye nokuhanjiswa. Ii-electrode zeTungsten zisetyenziswa ngokubanzi ukuwelda kwiipropathi zazo. Ukugaya okanye ukupolisha kwee-electrode ze-tungsten kunye nemivalo emnyama.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Indlela yeMveliso yeBright yalatha incam ye-tungsten electrode ephezulu-yobunyulu

1. Ukulungiswa kwezinto eziluhlaza: Khetha izinto ezicocekileyo ze-tungsten njengezinto ezibonakalayo zokuqinisekisa ukucoceka kunye nokusebenza kwe-electrode.

2. Ukulungiswa kwezinto: Izinto ze-Tungsten zicutshungulwa zibe yi-electrodes yesimo esifunwayo kunye nobukhulu ngokusebenzisa iinkqubo ezifana nokulungiswa okushushu, ukuqhutyelwa okubandayo, kunye nokuchaneka kwe-machining.

3. Unyango lomphezulu: Ukunyangwa komphezulu we-electrode, njengokupolisha, ukufakwa kwesanti, okanye ukugquma, ukuphucula ukugudiswa kunye nokunganyangeki kwe-corrosion ye-electrodes.

4. Ukuhlola kunye nokuvavanya: Ukuqhuba ukuhlolwa komgangatho kunye novavanyo lokusebenza kwi-electrode ye-tungsten eveliswayo ukuqinisekisa ukuba ihlangabezana neemfuno.

5. Ukupakishwa kunye nokuhanjiswa: Pakisha i-electrode ye-tungsten efanelekileyo kwaye uhambise ngokweemfuno zabathengi.

Ukusetyenziswa kwe-electrode ye-tungsten yencapha eqaqambileyo

Iinaliti zeTungsten ezineengcebiso ezichongiweyo zisetyenziswa kakhulu kwiiprobes zesixhobo. Njengomvavanyi wedijithali wedijithali, esi sixhobo sisixhobo sokulinganisa esineenjongo ezininzi esisebenzisa umgaqo womlinganiselo weprobe emine.

Esi sixhobo silandela umgangatho wesizwe weendlela zokuvavanya umzimba we-silicon ye-monocrystalline kwaye ibhekisela kwi-American A S. Isixhobo esikhethekileyo esilungiselelwe ngokwemigangatho ye-TM yokuvavanya ukuxhathisa kombane kunye ne-block resistance (i-thin layer resistance) yezixhobo ze-semiconductor.

Ilungele ukuvavanya ukusebenza kwezixhobo ze-semiconductor kwiifektri zezinto ze-semiconductor, iifektri zezixhobo ze-semiconductor, amaziko ophando, kunye namaziko emfundo ephakamileyo.

Ipharamitha

Igama lemveliso	Incam eqaqambileyo ye-tungsten electrode ephezulu-yobunyulu
Izinto eziphathekayo	W1
Inkcazo	Customized
Umphezulu	Ulusu olumnyama, ialkali ihlanjiwe, igudisiwe.
Ubuchwephesha	inkqubo Sintering, machining
Indawo yokunyibilika	3400℃
Ukuxinana	19.3g/cm3