Iithagethi zeSputterzizinto ezisetyenziselwa ukufaka iifilimu ezicekethekileyo kwiisubstrates ngexesha lenkqubo yokubeka umphunga (PVD). Izinto ekujoliswe kuzo zihlaselwe ngee-ion zamandla aphezulu, ezibangela ukuba ii-athomu zikhutshwe kwindawo ekujoliswe kuyo. Ezi athom ezitshiziweyo zifakwe kwi-substrate, zenze ifilimu encinci. Iithagethi ze-sputtering zisetyenziswa ngokuqhelekileyo kwimveliso ye-semiconductors, iiseli zelanga kunye nezinye izixhobo zombane. Ngokuqhelekileyo zenziwe ngesinyithi, i-alloys okanye iikhompawundi ezikhethiweyo ngokusekelwe kwiipropati ezifunwayo zefilimu egciniweyo.

Inkqubo ye-sputtering ichatshazelwa ziiparamitha ezininzi, kubandakanya:

1. Amandla okutshiza: Ubungakanani bamandla asetyenziswayo ngexesha lenkqubo yokutshiza kuya kuchaphazela amandla eeoni ezitshiziweyo, ngaloo ndlela kuchaphazela umlinganiselo wokutshiza.

2. Uxinzelelo lwegesi ye-sputtering: Uxinzelelo lwegesi ye-sputtering ekamelweni lichaphazela ukuhanjiswa ngokukhawuleza kwee-ion ezitshisiweyo, ngaloo ndlela kuchaphazela izinga lokutshiza kunye nokusebenza kwefilimu.

3. Iipropati ekujoliswe kuzo: Iimpawu ezibonakalayo kunye neekhemikhali zethagethi ye-sputtering, njengokwakheka kwayo, ukuqina, indawo yokunyibilika, njl., inokuchaphazela inkqubo yokutshiza kunye nokusebenza kwefilimu ediphozithiweyo.

4. Umgama phakathi kwethagethi kunye ne-substrate: Umgama phakathi kwethagethi ye-sputtering kunye ne-substrate iya kuchaphazela i-trajectory kunye namandla e-athomu e-sputtered, ngaloo ndlela ichaphazela izinga lokubeka kunye nokufana kwefilimu.

5. Ubuninzi bamandla: Ubuninzi bamandla obusetyenziswa kwindawo ekujoliswe kuyo buchaphazela izinga lokutshiza kunye nokusebenza kakuhle kwenkqubo yokutshiza.

Ngokulawula ngononophelo kunye nokuphucula ezi parameters, inkqubo yokutshiza inokuthi ilungelelaniswe ukufikelela kwiimpawu zefilimu ezinqwenelekayo kunye namazinga okubekwa.