Ukucoceka okuphezulu kwe-Ion yokufakelwa kwe-tungsten filament
I-ion implantation tungsten wire yinxalenye ephambili esetyenziswa kumatshini wokufakelwa kwe-ion, ngakumbi kwiinkqubo zokwenziwa kwe-semiconductor. Olu hlobo locingo lwe-tungsten ludlala indima ebalulekileyo kwizixhobo ze-semiconductor, kwaye umgangatho walo kunye nokusebenza kuchaphazela ngokuthe ngqo ukusebenza kwemigca yenkqubo ye-IC. Umatshini wokufakelwa kwe-Ion sisixhobo esibalulekileyo kwinkqubo yokuvelisa i-VLSI (iSekethe enkulu kakhulu eDityanisiweyo), kunye nendima yocingo lwe-tungsten njengomthombo we-ion awukwazi ukuhoywa. ...
| Imilinganiselo | Njengemizobo yakho |
| Indawo yeMvelaphi | Luoyang, Henan |
| Igama lebrand | FGD |
| Isicelo | isemiconductor |
| Umphezulu | Ulusu olumnyama, ukuhlamba kwealkali, ukubengezela kwemoto, ukupolisha |
| Ubunyulu | 99.95% |
| Izinto eziphathekayo | W1 |
| Ukuxinana | 19.3g/cm3 |
| Imigangatho yokwenziwa | GB/T 4181-2017 |
| Indawo yokunyibilika | 3400℃ |
| Umxholo wokungcola | 0.005% |
| Amacandelo aphambili | W-99.95% |
| Umxholo wokungcola≤ | |
| Pb | 0.0005 |
| Fe | 0.0020 |
| S | 0.0050 |
| P | 0.0005 |
| C | 0.01 |
| Cr | 0.0010 |
| Al | 0.0015 |
| Cu | 0.0015 |
| K | 0.0080 |
| N | 0.003 |
| Sn | 0.0015 |
| Si | 0.0020 |
| Ca | 0.0015 |
| Na | 0.0020 |
| O | 0.008 |
| Ti | 0.0010 |
| Mg | 0.0010 |
1. Umzi-mveliso wethu useLuoyang City, kwiPhondo laseHenan. I-Luoyang yindawo yemveliso yemigodi ye-tungsten kunye ne-molybdenum, ngoko ke sineenzuzo ezipheleleyo kumgangatho kunye nexabiso;
2. Inkampani yethu inabasebenzi bezobugcisa abaneminyaka engaphezu kwe-15 yamava, kwaye sibonelela ngezisombululo ezijoliswe kuzo kunye neengcebiso kwiimfuno zomthengi ngamnye.
3. Zonke iimveliso zethu zihlolwa ngokungqongqo umgangatho phambi kokuba zithunyelwe kumazwe angaphandle.
4. Ukuba ufumana iimpahla ezineziphene, unokuqhagamshelana nathi ukuze ubuyiselwe imali.
1.Ukhetho lwemathiriyeli ekrwada
(Khetha umgangatho ophezulu we-tungsten imathiriyeli ekrwada ukuqinisekisa ubunyulu kunye neempawu zoomatshini zemveliso yokugqibela.)
2. Ukunyibilika nokusulungekiswa
(Izixhobo ze-tungsten ezikhethiweyo ziyanyibilika kwindawo elawulwayo ukuze kususwe ukungcola kunye nokufezekisa ubunyulu obufunwayo.)
3. Umzobo wocingo
(Impahla ye-tungsten ecocekileyo ikhutshiwe okanye izotywe ngoluhlu lokufa ukuze kufezekiswe i-diameter efunekayo yocingo kunye neempawu zoomatshini.)
4.Ukuhlaziya
(Ucingo olutsaliweyo lwe-tungsten luthintelwe ukuphelisa uxinzelelo lwangaphakathi kunye nokuphucula i-ductility kunye nokusebenza kokusebenza)
5. Inkqubo yokufakelwa kwe-Ion
Kule meko, i-tungsten filament ngokwayo inokungena kwinkqubo yokufakelwa kwe-ion, apho i-ion itofwa kumphezulu we-tungsten filament ukuguqula iimpawu zayo zokuphucula ukusebenza kwi-ion implanter.)
Kwinkqubo yokuveliswa kwetshiphu ye-semiconductor, umatshini wokufakelwa kwe-ion sesinye sezixhobo eziphambili ezisetyenziselwa ukuhambisa umzobo wesekethe ye-chip ukusuka kumaski ukuya kwi-silicon wafer kwaye ufezekise umsebenzi wetshiphu ekujoliswe kuwo. Le nkqubo ibandakanya amanyathelo afana nokupolisha kwekhemikhali, ukuchithwa kwefilimu encinci, i-photolithography, i-etching, kunye nokufakelwa kwe-ion, phakathi kwayo ukufakelwa kwe-ion enye yeendlela ezibalulekileyo zokuphucula ukusebenza kwee-silicone wafers. Ukusetyenziswa koomatshini bokufakelwa kwe-ion kulawula ngokufanelekileyo ixesha kunye neendleko zokuvelisa i-chip, ngelixa kuphuculwa ukusebenza kunye nokuthembeka kwee-chips. ...
Ewe, ii-tungsten filaments ziyakwazi ukungcoliseka ngexesha lenkqubo yokufakelwa kwe-ion. Ukungcola kunokwenzeka ngenxa yezinto ezahlukeneyo, ezifana neegesi ezishiyekileyo, iincinci, okanye ukungcola okukhoyo kwigumbi lokufakelwa kwe-ion. Ezi ngcoliseko zinokubambelela kumphezulu we-tungsten filament, ezichaphazela ukucoceka kwayo kwaye zinokuchaphazela ukusebenza kwenkqubo yokufakelwa kwe-ion. Ngoko ke, ukugcina indawo ecocekileyo kunye nokulawulwa ngaphakathi kwegumbi lokufakelwa kwe-ion kubalulekile ekunciphiseni umngcipheko wokungcola kunye nokuqinisekisa ukunyaniseka kwe-tungsten filament. Iinkqubo zokucoca kunye nokugcinwa rhoqo zinokunceda ukunciphisa amandla okungcola ngexesha lokufakelwa kwe-ion.
I-Tungsten wire iyaziwa ngokuba yindawo ephezulu yokunyibilika kunye neempawu ezigqwesileyo zoomatshini, ezenza ukuba zixhathise ukuguqulwa phantsi kweemeko eziqhelekileyo zokufakelwa kwe-ion. Nangona kunjalo, ubushushu obuveliswa ngexesha lokuqhuma kwe-ion ye-energy ephezulu kunye nokufakelwa kwe-ion kunokubangela ukuphazamiseka ngexesha, ngakumbi ukuba iiparamitha zenkqubo azilawulwa ngononophelo.
Izinto ezifana nokuqina kunye nobude be-ion beam kunye nobushushu kunye namanqanaba oxinzelelo olufunyenwe yintambo ye-tungsten yonke inegalelo kwikhono lokuguqulwa. Ukongezelela, nakuphi na ukungcola okanye iziphene kwintambo ye-tungsten kuya kwandisa ukuchaphazeleka kwi-deformation.
Ukunciphisa umngcipheko wokuguqulwa, iiparamitha zenkqubo kufuneka zibekwe esweni kwaye zilawulwe ngononophelo, ukucoceka kunye nomgangatho we-tungsten filament kufuneka kuqinisekiswe, kwaye ukugcinwa okufanelekileyo kunye nokuhlolwa kweeprotocol kufuneka kuphunyezwe kwisixhobo sokufakelwa kwe-ion. Ukuvavanya rhoqo imeko kunye nokusebenza kocingo lwe-tungsten kunokunceda ukuchonga naziphi na iimpawu zokuphazamiseka kunye nokuthatha amanyathelo okulungisa njengoko kufuneka.
