Ofufuza a ku Moscow Institute of Physics and Technology akwanitsa kukulitsa mafilimu oonda kwambiri a molybdenum disulfide otambalala mpaka masentimita angapo masikweya. Zinawonetsedwa kuti kapangidwe kazinthuzo kakhoza kusinthidwa posintha kutentha kwa kaphatikizidwe. Mafilimu, omwe ndi ofunikira pamagetsi ndi optoelectronics, adapezedwa pa 900-1,000 ° Celsius. Zotsatirazo zidasindikizidwa mu nyuzipepala ya ACS Applied Nano Materials.

Zipangizo zamitundu iwiri zikukopa chidwi kwambiri chifukwa cha mawonekedwe awo apadera omwe amachokera ku kapangidwe kawo komanso zoletsa zamakina. Banja lazinthu za 2-D limaphatikizapo zitsulo, semimetals, semiconductors, ndi zotetezera. Graphene, yomwe mwina ndi chinthu chodziwika bwino cha 2-D, ndi monolayer wa ma atomu a kaboni. Ili ndi maulendo apamwamba kwambiri onyamula katundu omwe adalembedwa mpaka pano. Komabe, graphene ilibe kusiyana kwa bandi pansi pamikhalidwe yokhazikika, ndipo imalepheretsa kugwiritsa ntchito kwake.

Mosiyana ndi graphene, mulingo woyenera m'lifupi mwa bandgap mu molybdenum disulfide (MoS2) zimapangitsa kukhala oyenera ntchito zipangizo zamagetsi. Chigawo chilichonse cha MoS2 chimakhala ndi masangweji, ndi gawo la molybdenum lofinyidwa pakati pa zigawo ziwiri za maatomu a sulfure. Ma heterostructures amitundu iwiri van der Waals, omwe amaphatikiza zida zosiyanasiyana za 2-D, amawonetsanso lonjezo lalikulu. M'malo mwake, amagwiritsidwa ntchito kale pamagwiritsidwe okhudzana ndi mphamvu ndi catalysis. Kaphatikizidwe ka Wafer-scale (lalikulu) wa 2-D molybdenum disulfide akuwonetsa kuthekera kwakupita patsogolo pakupanga zida zamagetsi zowonekera komanso zosinthika, kulumikizana kwamaso pamakompyuta am'badwo wotsatira, komanso magawo ena amagetsi ndi ma optoelectronics.

"Njira yomwe tidapanga yopangira MoS2 ikuphatikiza njira ziwiri. Choyamba, filimu ya MoO3 imakula pogwiritsa ntchito njira ya atomiki yosanjikiza, yomwe imapereka makulidwe ake a atomiki ndikuloleza kuti malo onse akhale ogwirizana. Ndipo MoO3 ingapezeke mosavuta pazitsulo zokhala ndi mamilimita 300 m'mimba mwake. Kenako, filimuyo ndi kutentha mankhwala mu nthunzi sulfure. Zotsatira zake, maatomu a oxygen mu MoO3 amasinthidwa ndi maatomu a sulfure, ndipo MoS2 imapangidwa. Taphunzira kale kukulitsa makanema owonda kwambiri a MoS2 pamalo ofikira masentimita makumi angapo masikweya centimita,” akufotokoza motero Andrey Markeev, wamkulu wa MIPT's Atomic Layer Deposition Lab.

Ofufuzawo adatsimikiza kuti mawonekedwe a filimuyi amadalira kutentha kwa sulfure. Mafilimu opangidwa ndi sulfure pa 500 ° С ali ndi njere za crystalline, ma nanometers angapo aliyense, ophatikizidwa mu matrix amorphous. Pa 700 ° С, ma crystallites awa ali pafupifupi 10-20 nm kudutsa ndipo zigawo za S-Mo-S ndizoyang'ana pamtunda. Chifukwa chake, pamwamba pake pali zomangira zambiri zolendewera. Kapangidwe kotereku kakuwonetsa zochitika zambiri zothandiza pamachitidwe ambiri, kuphatikiza kusinthika kwa hydrogen. Kuti MoS2 igwiritsidwe ntchito pamagetsi, zigawo za S-Mo-S ziyenera kufanana ndi pamwamba, zomwe zimapezeka pa kutentha kwa sulfure 900-1,000 ° С. Mafilimu otsatiridwawo ndi owonda kwambiri ngati 1.3 nm, kapena zigawo ziwiri za mamolekyu, ndipo ali ndi malo ofunika kwambiri amalonda (ie, aakulu mokwanira).

Makanema a MoS2 opangidwa m'mikhalidwe yabwino adalowetsedwa muzitsulo zachitsulo-dielectric-semiconductor prototype, zomwe zimatengera ferroelectric hafnium oxide ndikuwonetsa transistor yogwira ntchito kumunda. Kanema wa MoS2 m'mapangidwe awa adakhala ngati njira ya semiconductor. Kuwongolera kwake kunkayendetsedwa ndi kusintha njira ya polarization ya ferroelectric layer. Mukakumana ndi MoS2, zinthu za La:(HfO2-ZrO2), zomwe zidapangidwa kale mu labu ya MIPT, zidapezeka kuti zili ndi polarization yotsalira ya ma microcoulombs 18 pa square centimita imodzi. Ndi kupirira kosinthika kwa ma 5 miliyoni, idakwera mbiri yakale yapadziko lonse lapansi yozungulira 100,000 pamakina a silicon.