Ndị na-eme nchọpụta si na Moscow Institute of Physics and Technology jisiri ike na-emepụta ihe nkiri dị mkpa nke molybdenum disulfide na-erute ọtụtụ iri puku kwuru iri centimita square. Egosiputara na enwere ike megharia ihe eji eme ihe site n'igbanwe onodu onodu a. Ihe nkiri ndị ahụ, bụ ndị dị mkpa maka ngwá electronic na optoelectronics, nwetara na 900-1,000 Celsius. E bipụtara nchoputa a n'akwụkwọ akụkọ ACS Applied Nano Materials.

Ihe akụkụ abụọ na-adọta mmasị dị ukwuu n'ihi njirimara ha pụrụ iche sitere na nhazi ha na mgbochi arụ ọrụ nke quantum. Ezinụlọ nke ihe 2-D gụnyere ọla, semimetals, semiconductor, na insulators. Graphene, nke bụ ma eleghị anya ihe 2-D kasị ewu ewu, bụ monolayer nke carbon carbon. Ọ nwere njem mbufe chaja kacha elu edekọtara ruo taa. Agbanyeghị, graphene enweghị oghere band n'okpuru ọnọdụ ọkọlọtọ, nke ahụ na-egbochi ngwa ya.

N'adịghị ka graphene, obosara kachasị mma nke bandgap na molybdenum disulfide (MoS2) na-eme ka ọ dị mma maka ojiji na ngwaọrụ eletrọnịkị. Igwe oyibo MoS2 ọ bụla nwere nhazi Sanwichi, nke nwere akwa molybdenum nke etinyere n'etiti okpukpu abụọ nke atọm sọlfọ. Akụkụ abụọ nke van der Waals heterostructures, nke jikọtara ihe dị iche iche 2-D, na-egosipụtakwa nkwa dị ukwuu. N'ezie, a na-eji ha eme ihe n'ọtụtụ ebe na ngwa ndị metụtara ume na catalysis. Wafer-scale (nnukwu mpaghara) njikọ nke 2-D molybdenum disulfide na-egosi ikike nke ọganihu ọganihu na ịmepụta ngwaọrụ eletrọnịkị na-agbanwe agbanwe na nke na-agbanwe agbanwe, nkwurịta okwu anya maka kọmputa na-esote ọgbọ, yana na mpaghara ndị ọzọ nke ngwá electronic na optoelectronics.

"Usoro anyị wepụtara iji mepụta MoS2 gụnyere usoro abụọ. Nke mbụ, a na-eto ihe nkiri nke MoO3 site na iji usoro ntinye ntinye nke oyi akwa atomic, nke na-enye ọkpụrụkpụ atomic oyi akwa ma na-enye ohere mkpuchi ihu niile. Enwere ike nweta MoO3 n'ụzọ dị mfe na wafers ruru 300 millimeters na dayameta. Na-esote, a na-edozi ihe nkiri ahụ na-ekpo ọkụ na sulfur vapor. N'ihi ya, atom oxygen dị na MoO3 na-eji atom sọlfọ dochie anya, a na-emepụta MoS2. Anyị amụtala itolite ihe nkiri MoS2 dị gịrịgịrị na mpaghara ruru ọtụtụ iri puku kwuru iri square centimeters,” Andrey Markeev na-akọwa, onye isi MIPT's Atomic Layer Deposition Lab.

Ndị nchọpụta ahụ kpebiri na nhazi nke ihe nkiri ahụ na-adabere na okpomọkụ nke sulfurization. Ihe nkiri sulfurized na 500°C nwere ọka kristal, nanometer ole na ole nke ọ bụla, agbakwunyere na matriks amorphous. Na 700 Celsius, kristal ndị a dị ihe dịka 10-20 nm n'ofe na S-Mo-S n'ígwé na-adabere n'elu. N'ihi ya, elu ahụ nwere ọtụtụ njikọ na-akụda. Ọdịdị dị otú ahụ na-egosipụta ọrụ catalytic dị elu n'ọtụtụ mmeghachi omume, gụnyere mmeghachi omume evolushọn hydrogen. Maka MoS2 ga-eji na eletrọnịkị, S-Mo-S n'ígwé ga-adị n'elu, nke a na-enweta na sulfurization okpomọkụ nke 900-1,000 ° C. Ihe nkiri ndị a na-esi na ya pụta dị gịrịgịrị ka 1.3 nm, ma ọ bụ akwa molikula abụọ, ma nwee nnukwu azụmahịa (ya bụ, buru ibu) mpaghara.

Ihe nkiri MoS2 emebere n'okpuru ọnọdụ kachasị mma ka ewebatara n'ime ihe nrụpụta metal-dielectric-semiconductor, nke dabere na ferroelectric hafnium oxide ma gosipụta transistor mmetụta ubi. Ihe nkiri MoS2 dị na ụlọ ndị a rụrụ ọrụ dị ka ọwa semiconductor. A na-achịkwa omume ya site n'ịgbanwe ntụziaka polarization nke oyi akwa ferroelectric. Mgbe a na-akpakọrịta na MoS2, ihe La:(HfO2-ZrO2), nke emebere na mbụ n'ime ụlọ nyocha MIPT, achọpụtara na ọ nwere polarization fọdụrụnụ nke ihe dịka 18 microcoulombs kwa centimita square. Site na ntachi obi na-agbanwe nke okirikiri nde 5, ọ tolitere ndekọ ụwa gara aga nke okirikiri 100,000 maka ọwa silicon.