Yes, tungsten filaments are susceptible to contamination during the ion implantation process.  Contamination can occur due to a variety of factors, such as residual gases, particles, or impurities present in the ion implantation chamber.  These contaminants can adhere to the surface of the tungsten filament, affecting its purity and potentially affecting the performance of the ion implantation process.  Therefore, maintaining a clean and controlled environment within the ion implantation chamber is critical to minimizing the risk of contamination and ensuring the integrity of the tungsten filament.  Regular cleaning and maintenance procedures can also help mitigate the potential for contamination during ion implantation.

Tungsten wire is known for its high melting point and excellent mechanical properties, which make it resistant to deformation under normal ion implantation conditions. However, the heat generated during high-energy ion bombardment and ion implantation can cause distortion over time, especially if process parameters are not carefully controlled.

Factors such as the intensity and duration of the ion beam and the temperature and stress levels experienced by the tungsten wire can all contribute to the potential for deformation. Additionally, any impurities or defects in the tungsten wire will exacerbate susceptibility to deformation.

To reduce the risk of deformation, process parameters must be carefully monitored and controlled, the purity and quality of the tungsten filament must be ensured, and appropriate maintenance and inspection protocols must be implemented for the ion implantation equipment. Regularly assessing the condition and performance of tungsten wire can help identify any signs of distortion and take corrective action as needed.