Ua hiki i nā mea noiʻi mai ka Moscow Institute of Physics and Technology ke ulu i nā kiʻiʻoniʻoni ʻoniʻoni atomically o ka molybdenum disulfide a hiki i nā ʻumi kenimika square. Ua hōʻike ʻia hiki ke hoʻololi ʻia ke ʻano o ka mea ma o ka hoʻololi ʻana i ka mahana synthesis. ʻO nā kiʻiʻoniʻoni, he mea nui i ka uila a me ka optoelectronics, i loaʻa ma 900-1,000 ° Celsius. Ua paʻi ʻia nā ʻike ma ka puke pai ACS Applied Nano Materials.

ʻO nā mea ʻelua-dimensional ka mea hoihoi nui ma muli o kā lākou mau waiwai kūʻokoʻa i hoʻokumu ʻia mai ko lākou kūkulu ʻana a me nā palena mechanical quantum. ʻO ka ʻohana o nā mea 2-D e pili ana i nā metala, semimetal, semiconductors, a me nā insulators. ʻO Graphene, ʻo ia paha ka mea kaulana loa 2-D, he monolayer o nā ʻātoma kalapona. Loaʻa iā ia ka mobility kiʻekiʻe loa i hoʻopaʻa ʻia a hiki i kēia lā. Eia nō naʻe, ʻaʻohe ʻāpana o ka graphene ma lalo o nā kūlana maʻamau, a ua kaupalena ʻia kāna mau noi.

ʻAʻole like me ka graphene, ʻo ka laulā maikaʻi loa o ka bandgap i ka molybdenum disulfide (MoS2) e kūpono ia no ka hoʻohana ʻana i nā mea uila. Loaʻa i kēlā me kēia papa MoS2 kahi ʻano sanwiti, me kahi papa o ka molybdenum i ʻoki ʻia ma waena o ʻelua papa o nā ʻātoma sulfur. ʻO nā ʻano like ʻole van der Waals heterostructures, kahi e hui pū ai i nā mea 2-D like ʻole, hōʻike i ka ʻōlelo hoʻohiki maikaʻi. ʻOiaʻiʻo, ua hoʻohana nui ʻia lākou i nā noi pili i ka ikehu a me ka catalysis. Hōʻike ʻo Wafer-scale (nui-area) synthesis o 2-D molybdenum disulfide i ka hiki ke holomua i ka holomua ʻana i ka hana ʻana i nā mea uila uila a maʻalahi, kamaʻilio optical no nā kamepiula e hiki mai ana, a me nā ʻoihana ʻē aʻe o ka uila a me ka optoelectronics.

"ʻO ke ala a mākou i hana ai e synthesize MoS2 e pili ana i ʻelua mau ʻanuʻu. ʻO ka mea mua, hoʻoulu ʻia kahi kiʻiʻoniʻoni o MoO3 me ka hoʻohana ʻana i ka ʻenehana deposition layer atomic, e hāʻawi ana i ka mānoanoa o ka papa atomic pololei a hiki ke hoʻopili like ʻia o nā ʻili āpau. A hiki ke loaʻa maʻalahi ka MoO3 ma nā wafer a hiki i 300 millimeters ke anawaena. A laila, hoʻomaʻamaʻa ʻia ke kiʻi i ka wela sulfur. ʻO ka hopena, ua pani ʻia nā ʻātoma oxygen i MoO3 e nā ʻātoma sulfur, a ua hoʻokumu ʻia ʻo MoS2. Ua aʻo mua mākou i ka ulu ʻana i nā kiʻiʻoniʻoni ʻoniʻoni ʻo MoS2 ma kahi ʻāpana a hiki i nā ʻumi kenimika square, "wahi a Andrey Markeev, ke poʻo o ka MIPT's Atomic Layer Deposition Lab.

Ua hoʻoholo ka poʻe noiʻi e pili ana ke ʻano o ke kiʻiʻoniʻoni i ka mahana sulfurization. ʻO nā kiʻiʻoniʻoni sulfurized ma 500 ° С i loaʻa i nā kīʻaha crystalline, he mau nanometer kēlā me kēia, i hoʻokomo ʻia i loko o kahi matrix amorphous. Ma 700 ° С, aia kēia mau crystallites ma kahi o 10-20 nm ma waena a ʻo nā papa S-Mo-S e kuhikuhi pololei ana i ka ʻili. ʻO ka hopena, loaʻa i ka ʻili nā mea paʻa he nui. Hōʻike ʻia kēlā ʻano hana i ka hana catalytic kiʻekiʻe i nā hopena he nui, me ka hopena hydrogen evolution. No ka MoS2 e hoʻohana ʻia i ka uila, pono nā ʻāpana S-Mo-S e like me ka ʻili, i loaʻa i nā mahana sulfurization o 900-1,000 ° C. ʻO nā kiʻiʻoniʻoni i loaʻa mai he 1.3 nm, a i ʻole ʻelua papa molekala, a loaʻa kahi ʻāpana koʻikoʻi (ʻo ia hoʻi, lawa ka nui).

Ua hoʻokomo ʻia nā kiʻiʻoniʻoni MoS2 i hoʻohui ʻia ma lalo o nā kūlana maikaʻi loa i loko o nā hana prototype metala-dielectric-semiconductor, i hoʻokumu ʻia ma ka ferroelectric hafnium oxide a hoʻohālike i kahi transistor hopena. ʻO ke kiʻiʻoniʻoni MoS2 i loko o kēia mau hale i lawelawe ʻia ma ke ʻano semiconductor channel. Ua hoʻomalu ʻia kona conductivity e ka hoʻololi ʻana i ke kuhikuhi polarization o ka papa ferroelectric. I ka launa pū ʻana me MoS2, ua ʻike ʻia ka La:(HfO2-ZrO2), i kūkulu mua ʻia i loko o ke keʻena MIPT, he koena polarization ma kahi o 18 microcoulombs ma ke kenimika square. Me ka hoʻololi ʻana o 5 miliona mau pōʻaiapuni, ua ʻoi aku ia ma mua o ka moʻolelo honua o 100,000 mau pōʻai no nā kaila silika.