Akwai babban igiyar iskar ion a cikin wani abu mai ƙarfi, ion katako zuwa atom ɗin abu mai ƙarfi ko kwayoyin halitta zuwa saman abu mai ƙarfi, wannan al'amari shi ake kira ion beam sputtering; kuma lokacin da ƙaƙƙarfan abu, saman ƙaƙƙarfan abu ya koma baya, ko kuma daga cikin ƙaƙƙarfan abu zuwa ga waɗannan abubuwan ana kiransa watsawa; Akwai wani abin al'ajabi shi ne cewa bayan ion katako zuwa ga m abu ta m abu da kuma rage juriya sannu a hankali, kuma a karshe zauna a cikin m kayan, wannan sabon abu shi ne ake kira ion implantation.
Dabarar dasa ion:
Wani nau'in fasaha ne na gyara saman kayan abu wanda ya haɓaka cikin sauri kuma ana amfani da shi sosai a duniya a cikin shekaru 30 da suka gabata. Babban ka'idar ita ce amfani da makamashin abin da ya faru na ion beam zuwa tsari na 100keV abu zuwa ion katako da kayan atom ko kwayoyin za su kasance jerin hulɗar jiki da sinadarai, abin da ya faru ion makamashi hasara a hankali, tasha ta ƙarshe a cikin. kayan aiki, da kuma haifar da tsari da kaddarorin abubuwan da ke tattare da kayan abu, canzawa. Domin inganta yanayin saman kayan, ko don samun wasu sabbin kaddarorin. Sabuwar fasaha saboda fa'idodinta na musamman, ya kasance a cikin kayan doped semiconductor, ƙarfe, yumbu, polymer, gyare-gyaren saman yana amfani da ko'ina, ya sami fa'idodin tattalin arziki da zamantakewa.
Sanya ion a matsayin fasaha mai mahimmanci na doping a cikin fasaha na lantarki na micro yana taka muhimmiyar rawa wajen inganta abubuwan da ke cikin kayan. Fasahar dasa ion tana da babban aikin zafin jiki da juriya ga juriyar lalata sinadarai na kayan. Sabili da haka, manyan sassa na ɗakin ionization an yi su ne da tungsten, molybdenum ko kayan graphite. Gemei shekaru na bincike na masana'antu da samarwa ta hanyar ion dasa kayan tungsten molybdenum, tsarin samarwa yana da kwanciyar hankali da ƙwarewa.